Shenlin Chen
20Patents
4h-index
13Co-inventors
56Inventor score
Filing activity: Aug 20, 2001 → May 16, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7440255B2 | Capacitor constructions and methods of forming | Electricity | 20 | Expired |
| US6458652B1 | Methods of forming capacitor electrodes | Emerging Cross-Sectional Technologies | 10 | Expired |
| US6870210B2 | Dual-sided capacitor | Electricity | 8 | Expired |
| US6902973B2 | Hemi-spherical grain silicon enhancement | Electricity | 5 | Expired |
| US7034353B2 | Methods for enhancing capacitors having roughened features to increase charge-storage capacity | Electricity | 4 | Expired |
| US6858493B2 | Method of forming a dual-sided capacitor | Electricity | 3 | Expired |
| US7321148B2 | Capacitor constructions and rugged silicon-containing surfaces | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6693007B2 | Methods of utilizing a sacrificial layer during formation of a capacitor | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6949427B2 | Methods of forming a capacitor structure | Emerging Cross-Sectional Technologies | 2 | Expired |
| US8211732B2 | Image sensor with raised photosensitive elements | Electricity | 2 | Active |
| US6756265B2 | Methods of forming a capacitor structure | Emerging Cross-Sectional Technologies | 2 | Expired |
| US7101756B2 | Methods for enhancing capacitors having roughened features to increase charge-storage capacity | Electricity | 1 | Expired |
| US7023039B2 | Capacitor structures with dual-sided electrode | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7071056B2 | Method of forming a dual-sided capacitor | Electricity | 1 | Expired |
| US7528430B2 | Electronic systems | Emerging Cross-Sectional Technologies | 1 | Active |
| US7355232B2 | Memory devices with dual-sided capacitors | Electricity | 1 | Expired |
| US6916723B2 | Methods of forming rugged semiconductor-containing surfaces | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7268382B2 | DRAM cells | Emerging Cross-Sectional Technologies | 0 | Active |
| US7405438B2 | Capacitor constructions and semiconductor structures | Emerging Cross-Sectional Technologies | 0 | Expired |
| US8525241B2 | Image sensor with raised photosensitive elements | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.