Single gate semiconductor device
US8525243B2 · kind B2 · utility
0Cited by
2References
20Claims
0Family size
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Inventors
Key dates
| Filing date | Jul 11, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Sep 16, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
Abstract
A semiconductor device has a gate multiple doping regions on both sides of the gate. The gate can be shared by a transistor and a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.