Silicone carbide trench semiconductor device

US8525254B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Michael Treu · Villach, AT
• Ralf Siemieniec · Villach, AT

Key dates

• Filing date: Aug 12, 2010
• Grant date: Sep 3, 2013
• Expiry date: Dec 26, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/513

Abstract

A semiconductor device as described herein includes a silicon carbide semiconductor body. A trench extends into the silicon carbide semiconductor body at a first surface. A gate dielectric and a gate electrode are formed within the trench. A body zone of a first conductivity type adjoins to a sidewall of the trench, the body zone being electrically coupled to a contact via a body contact zone including a higher maximum concentration of dopants than the body zone. An extension zone of the first conductivity type is electrically coupled to the contact via the body zone, wherein a maximum concentration of dopants of the extension zone along a vertical direction perpendicular to the first surface is higher than the maximum concentration of dopants of the body zone along the vertical direction. A distance between the first surface and a bottom side of the extension zone is larger than the distance between the first surface and the bottom side of the trench.