Super junction device with deep trench and implant
US8525260B2 · kind B2 · utility
2Cited by
28References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Dec 26, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
Abstract
RESURF effect devices with both relatively deep trenches and relatively deep implants are described herein. Also, methods of fabricating such devices are described herein. A RESURF effect device may include alternating regions of first and second conductivity types where each of the second regions includes an implant region formed into a trench region of the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.