Connecting member for connecting a semiconductor element and a frame, formed of an Al-based layer and first and second Zn-based layers provided on surfaces of the Al-based layer
US8525330B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 30, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Aug 30, 2030 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a connecting part for a semiconductor device including a semiconductor element, a frame, and a connecting part which connects the semiconductor element and the frame to each other, in which an interface between the connecting part and the semiconductor element and an interface between the connecting part and the frame respectively have the area of Al oxide film which is more than 0% and less than 5% of entire area of the respective interfaces. The connecting part has an Al-based layer and first and second Zn-based layers on main surfaces of the Al-based layer, a thickness ratio of the Al-based layer relative to the Zn-based layers being less than 0.59.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.