Device with through-silicon via (TSV) and method of forming the same
US8525343B2 · kind B2 · utility
5Cited by
34References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2225/06572
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A device with through-silicon via (TSV) and a method of forming the same includes the formation of an opening in a silicon substrate, the formation of a first insulation layer on the sidewalls and bottom of the opening, the formation of a second insulation layer on the sidewalls and bottom of the opening. A first interface between the first insulation layer and the silicon substrate has an interface roughness with a peak-to-valley height less than 5 nm. A second interface between the second insulation layer and the conductive layer has an interface roughness with a peak-to-valley height less than 5 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.