Bond pad structure and fabricating method thereof
US8525354B2 · kind B2 · utility
11Cited by
27References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2011 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/1461
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bond pad structure comprises an interconnection structure and an isolation layer. The dielectric layer has an opening and a metal pad. The isolation layer is disposed on the interconnection structure and extends into the opening until it is in contact with the metal pad, whereby the sidewalls of the opening is blanketed by the isolation layer, and a portion of the metal pad is exposed from the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.