Memory cells, methods of programming memory cells, and methods of forming memory cells
US8526213B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2010 |
| Grant date | Sep 3, 2013 |
| Priority date | — |
| Expiry date | Aug 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of programming a memory cell. A plurality of charge carriers may be moved within the memory cell, with an average charge across the moving charge carriers having an absolute value greater than 2. Some embodiments include methods of forming and programming an ionic-transport-based memory cell. A stack is formed to have programmable material between first and second electrodes. The programmable material has mobile ions which are moved within the programmable material to transform the programmable material from one memory state to another. An average charge across the moving mobile ions has an absolute value greater than 2. Some embodiments include memory cells with programmable material between first and second electrodes. The programmable material includes an aluminum nitride first layer, and includes a second layer containing a mobile ion species in common with the first layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.