Process of forming an electronic device including a gate electrode and a gate tap
US8530304B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2011 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Sep 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device can include a gate electrode and a gate tap that makes an unlanded contact to the gate electrode. The electronic device can further include a source region and a drain region that may include a drift region. In an embodiment, the gate electrode has a height that is greater than its width. In another embodiment, the electronic device can include gate taps that spaced apart from each other, wherein at least some of the gate taps contact the gate electrode over the channel region. In a further embodiment, at a location where the gate tap contacts the gate electrode, the gate tap is wider than the gate electrode. A variety of processes can be used to form the electronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.