Method for manufacturing fine-pitch bumps and structure thereof
US8530344B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2012 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Mar 22, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing fine-pitch bumps comprises providing a silicon substrate; forming a titanium-containing metal layer having a plurality of first zones and a plurality of second zones on the silicon substrate; forming a photoresist layer on the titanium-containing metal layer; patterning the photoresist layer; forming a plurality of copper bumps having a plurality of first top surfaces and a plurality of first ring surfaces; heating the photoresist layer to form a plurality of body portions and removable portions; etching the photoresist layer; forming a plurality of bump protection layers on the titanium-containing metal layer, the first top surface and the first ring surface, each of the bump protection layers comprises a bump coverage portion; plating a plurality of gold layers at the bump coverage portion; eventually, removing the second zones to enable each of the first zones to form an under bump metallurgy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.