Phase change memory including ovonic threshold switch with layered electrode and methods for forming same
US8530875B1 · kind B1 · utility
21Cited by
6References
12Claims
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Key dates
| Filing date | May 6, 2010 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Oct 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
Abstract
Erosion of chalcogenides in phase change memories using ovonic threshold switch selectors can be reduced by controlling columnar morphology in electrodes used in the ovonic threshold switch. The columnar morphology may cause cracks to occur which allow etchants used to etch the ovonic threshold switch to sneak through the ovonic threshold switch and to attack chalcogenides, either in the switch or in the memory element. In one embodiment, the electrode may be split into two metal nitride layers separated by an intervening metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.