Field-effect transistor, and process for producing field-effect transistor
US8530891B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2008 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Apr 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
Abstract
To provide a field-effect transistor improved in transparency, electrical properties, stability, uniformity, reproducibility, heat resistance and durability, and as a reduced overlap capacity between electrodes.A field-effect thin film transistor 1001 includes a gate electrode 1025, an active layer, a source electrode 1022 and a drain electrode 1023, wherein a crystalline oxide 1021 containing indium and having an electron carrier concentration of less than 1018/cm3 is used as the active layer, and the gate electrode 1025 is in self-alignment with the source electrode 1022 and the drain electrode 1023. The crystalline oxide 1021 contains a positive trivalent element different from a positive divalent element or indium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.