Conductive filament based memory elements and methods with improved data retention and/or endurance
US8531867B2 · kind B2 · utility
1Cited by
4References
13Claims
0Family size
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Inventor
Key dates
| Filing date | May 4, 2012 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | May 4, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C13/0011
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory element can include a memory layer formed between two electrodes; at least one element within the memory layer that is oxidizable in the presence of an electric field applied across the electrodes; and an inhibitor material incorporated into at least a portion of the memory layer that decreases an oxidation rate of the at least one element within the memory layer with respect to the memory layer alone. Methods of forming such a memory element are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.