Patent assignee · US · COMPANY

Adesto Technologies Corporation

129Patents

128Active

129Granted

59Portfolio score

Filing activity: May 20, 2005 → Jul 18, 2022 · 10 expiring within 5 years

Most-cited patents

Patent	Title	Area	Cited by	Status
US8331128B1	Reconfigurable memory arrays having programmable impedance elements and corresponding methods	Physics	40	Active
US9165644B2	Method of operating a resistive memory device with a ramp-up/ramp-down program/erase pulse	Physics	24	Active
US8687403B1	Circuits having programmable impedance elements	Physics	24	Active
US7359236B2	Read, write and erase circuit for programmable memory devices	Physics	22	Expired
US8426839B1	Conducting bridge random access memory (CBRAM) device structures	Electricity	19	Active
US7514706B2	Voltage reference circuit using programmable metallization cells	Physics	17	Active
US8107273B1	Integrated circuits having programmable metallization cells (PMCs) and operating methods therefor	Physics	17	Active
US7426131B2	Programmable memory device circuit	Physics	16	Active
US8654561B1	Read methods, circuits and systems for memory devices	Physics	16	Active
US8437171B1	Methods and circuits for temperature varying write operations of programmable impedance elements	Physics	15	Active
US8274842B1	Variable impedance memory device having simultaneous program and erase, and corresponding methods and circuits	Physics	13	Active
US8941089B2	Resistive switching devices and methods of formation thereof	Electricity	13	Active
US9812200B2	Concurrent read and write operations in a serial flash device	Physics	12	Active
US8854873B1	Memory devices, architectures and methods for memory elements having dynamic change in property	Physics	12	Active
US8294488B1	Programmable impedance element circuits and methods	Electricity	11	Active
US7483294B2	Read, write, and erase circuit for programmable memory devices	Physics	10	Active
US9053789B1	Triggered cell annihilation for resistive switching memory devices	Physics	10	Active
US8866122B1	Resistive switching devices having a buffer layer and methods of formation thereof	Electricity	10	Active
US10042587B1	Automatic resumption of suspended write operation upon completion of higher priority write operation in a memory device	Physics	10	Active
US8625331B1	Methods of programming and erasing programmable metallization cells (PMCs)	Physics	10	Active
US10539989B1	Memory device alert of completion of internally self-timed power-up and reset operations	Emerging Cross-Sectional Technologies	9	Active
US8895953B1	Programmable memory elements, devices and methods having physically localized structure	Electricity	9	Active
US9361975B2	Sensing data in resistive switching memory devices	Physics	9	Active
US9029829B1	Resistive switching memories	Physics	9	Active
US8659931B1	Erase and soft program within the erase operation for a high speed resistive switching memory operation with controlled erased states	Physics	9	Active

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.