Magnetic memory
US8531875B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2012 |
| Grant date | Sep 10, 2013 |
| Priority date | — |
| Expiry date | Apr 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a magnetic memory includes at least one memory cell including a magnetoresistive element, and first and second electrodes. The element includes a first magnetic layer, a tunnel barrier layer, a second magnetic layer, and a third magnetic layer provided on the second magnetic layer and having a magnetization antiparallel to the magnetization direction of the second magnetic layer. A diameter of an upper surface of the first magnetic layer is smaller than that of a lower surface of the tunnel barrier layer. A diameter of a lower surface of the second magnetic layer is not more than that of an upper surface of the tunnel barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.