Patent · US Active

Pattern inspection method and semiconductor device manufacturing method

US8532395B2 · kind B2 · utility

7Cited by
15References
15Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 26, 2011
Grant dateSep 10, 2013
Priority date
Expiry dateOct 8, 2031

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06T2207/30148
  • WIPO fieldMeasurement
  • WIPO sectorInstruments

Abstract

In one embodiment, a pattern inspection method is disclosed. The method can include predicting an edge shape at a given future time with respect to the same inspection target pattern, setting a threshold corresponding to a required specification of the inspection target pattern, and predicting the time when the inspection target pattern fails to meet the required specification from the predicted edge shape and the threshold. The method can further include taking a plurality of images concerning the inspection target pattern at different times by use of an imaging apparatus, detecting edges of the obtained images, respectively, matching the detected edges of different imaging times, and obtaining a difference between corresponding edges to generate a difference vector after the matching. The edge shape of the future time can be predicted based on the generated difference vector and an interval between the imaging times.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.