Method of manufacturing resistance change element
US8533938B2 · kind B2 · utility
1Cited by
3References
4Claims
0Family size
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Key dates
| Filing date | Jun 18, 2009 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | May 9, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49155
Abstract
In a resistance change memory (ReRAM) storing data by utilizing change in resistance of a resistance change element, a transistor T, interlayer insulating films, W plugs and the like are formed on a semiconductor substrate. Thereafter, a Pt film serving as a lower electrode of the resist change element is formed and a transition metal film (Ni film) is formed on the Pt film. After that, the surface of the transition metal film is oxidized to form a transition metal oxide film and a Pt film serving as an upper electrode is formed on the transition metal oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.