Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases

US8536012B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Renata Camillo-Castillo · South Burlington, US
• Peter B. Gray · Jericho, US
• David L. Harame · South Burlington, US
• Alvin J. Joseph · Williston, US
• Marwan H. Khater · New York, US
• Qizhi Liu · South Burlington, US

Key dates

• Filing date: Jul 6, 2011
• Grant date: Sep 17, 2013
• Expiry date: Sep 4, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/401

Abstract

Methods for fabricating bipolar junction transistors, bipolar junction transistors made by the methods, and design structures for a bipolar junction transistor. The bipolar junction transistor includes a dielectric layer on an intrinsic base and an extrinsic base at least partially separated from the intrinsic base by the dielectric layer. An emitter opening extends through the extrinsic base and the dielectric layer. The dielectric layer is recessed laterally relative to the emitter opening to define a cavity between the intrinsic base and the extrinsic base. The cavity is filled with a semiconductor layer that physically links the extrinsic base and the intrinsic base together.