Forming phase change memory cells

US8536013B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Yudong Kim · Cupertino, US
• Fabio Pellizzer · Boise, US

Key dates

• Filing date: May 24, 2011
• Grant date: Sep 17, 2013
• Expiry date: Jun 2, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Small phase change memory cells may be formed by forming a segmented heater over a substrate. A stop layer may be formed over the heater layer and segmented with the heater layer. Then, sidewall spacers may be formed over the segmented heater to define an aperture between the sidewall spacers that may act as a mask for etching the stop layer over the segmented heater. As a result of the etching using the sidewall spacers as a mask, sublithographic pore may be formed over the heater. Phase change material may be formed within the pore.