Patent · US Active

Semipolar semiconductor crystal and method for manufacturing the same

US8536030B2 · kind B2 · utility

2Cited by

2References

20Claims

0Family size

Assignee

FREIBERGER COMPOUND MATERIALS GMBH · DE

Inventors

Thomas Wunderer · Palo Alto, US
Stephan Schwaiger · Bodelshausen, DE
Ilona Argut · Ulm, DE
Rudolph Rosch · Ichenhausen, DE
Frank Lipski · Reutlingen, DE
Ferdinand Scholz · Ulm, DE

Key dates

Filing date	Mar 18, 2011
Grant date	Sep 17, 2013
Priority date	—
Expiry date	Mar 15, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B29/403
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.