Patent · US Active

Inverted metamorphic multijunction solar cells

US8536445B2 · kind B2 · utility

9Cited by
33References
36Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 2, 2006
Grant dateSep 17, 2013
Priority date
Expiry dateSep 18, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second subcell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.