Inverted metamorphic multijunction solar cells
US8536445B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 2006 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Sep 18, 2029 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming a multijunction solar cell comprising an upper subcell, a middle subcell, and a lower subcell comprising providing first substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on said substrate having a first band gap; forming a second solar subcell over said first subcell having a second band gap smaller than said first band gap; and forming a grading interlayer over said second subcell having a third band gap larger than said second band gap forming a third solar subcell having a fourth band gap smaller than said second band gap such that said third subcell is lattice mismatched with respect to said second subcell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.