Semiconductor device and method for manufacturing the same
US8536629B2 · kind B2 · utility
9Cited by
1References
35Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 14, 2010 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Jan 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/12044
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device, includes: forming an insulating film containing silicon, oxygen and carbon on at least one of a first substrate and a second substrate; and bonding the first substrate and the second substrate together, with the insulating film interposed therebetween. There can be provided a method capable of manufacturing a semiconductor device having high element density, high performance and high reliability, with high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.