Trench type power transistor device
US8536646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2011 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Sep 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
The present invention provides a trench type power transistor device including a semiconductor substrate, at least one transistor cell, a gate metal layer, a source metal layer, and a second gate conductive layer. The semiconductor substrate has at least one trench. The transistor cell includes a first gate conductive layer disposed in the trench. The gate metal layer and the source metal layer are disposed on the semiconductor substrate. The second gate conductive layer is disposed between the first gate conductive layer and the source metal layer. The second gate conductive layer electrically connects the first gate conductive layer to the gate metal layer, and the second gate conductive layer is electrically insulated from the source metal layer and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.