Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of reading to and writing from a memory cell, and methods of programming a memory cell
US8537599B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2012 |
| Grant date | Sep 17, 2013 |
| Priority date | — |
| Expiry date | Sep 12, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/77
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one aspect, a method of operating a memory cell includes using different electrodes to change a programmed state of the memory cell than are used to read the programmed state of the memory cell. In one aspect, a memory cell includes first and second opposing electrodes having material received there-between. The material has first and second lateral regions of different composition relative one another. One of the first and second lateral regions is received along one of two laterally opposing edges of the material. Another of the first and second lateral regions is received along the other of said two laterally opposing edges of the material. At least one of the first and second lateral regions is capable of being repeatedly programmed to at least two different resistance states. Other aspects and implementations are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.