Finlike structures and methods of making same

US8541270B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Ming-Hsi Yeh · Hsinchu, TW
• Chi-Ming Yang · Hsinchu, TW
• Chin-Hsiang Lin · Hsinchu, TW

Key dates

• Filing date: Oct 7, 2011
• Grant date: Sep 24, 2013
• Expiry date: Oct 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer.