Semiconductor device and structure
US8541819B1 · kind B1 · utility
135Cited by
320References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 9, 2010 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Oct 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device including: a first mono-crystal layer and a second mono-crystal layer and at least one conductive layer in-between; where the at least one conductive layer includes a first conductive layer overlaying a second conductive layer overlying a third conductive layer, and where the second conductive layer having a predetermined second layer current carrying capacity greater than the current carrying capacity of the first conductive layer, and the second conductive layer current carrying capacity being greater than the current carrying capacity of the third conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.