Data retention in a single poly EPROM cell
US8541863B2 · kind B2 · utility
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2Claims
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Key dates
| Filing date | Nov 29, 2010 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Jul 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/60
Abstract
An electrically programmable read only memory (EPROM) BIT cell structure formed on a semiconductor substrate comprises an N-type epitaxial layer formed on the semiconductor substrate, an N-type well region formed in the epitaxial layer, LOCOS field oxide formed at the periphery of the well region to define an active device region in the well region, a field oxide ring formed in the active region and space-apart from the LOCOS field oxide to define an EPROM BIT cell region, and an EPROM BIT cell formed in the EPROM BIT cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.