Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semipolar bulk gallium nitride substrates
US8541869B2 · kind B2 · utility
2Cited by
7References
10Claims
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Key dates
| Filing date | Feb 12, 2008 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | May 9, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3216
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A III-nitride edge-emitting laser diode is formed on a surface of a III-nitride substrate having a semipolar orientation, wherein the III-nitride substrate is cleaved by creating a cleavage line along a direction substantially perpendicular to a nonpolar orientation of the III-nitride substrate, and then applying force along the cleavage line to create one or more cleaved facets of the III-nitride substrate, wherein the cleaved facets have an m-plane or a-plane orientation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.