Nonvolatile memory and methods for manufacturing the same with molecule-engineered tunneling barriers
US8542540B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 2010 |
| Grant date | Sep 24, 2013 |
| Priority date | — |
| Expiry date | Sep 5, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0466
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Embodiments of tunneling barriers and methods for same can embed modules exhibiting a monodispersion characteristic into a dielectric layer (e.g., between first and second layers forming a dielectric layer). In one embodiment, by embedding C60 molecules inbetween first and second insulating layers forming a dielectric layer, a field sensitive tunneling barrier can be implemented. In one embodiment, the tunneling barrier can be between a floating gate and a channel in a semiconductor structure. In one embodiment, a tunneling film can be used in nonvolatile memory applications where C60 provides accessible energy levels to prompt resonant tunneling through the dielectric layer upon voltage application.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.