Patent · US Active

Critical dimension control during template formation

US8545709B2 · kind B2 · utility

4Cited by

1References

13Claims

0Family size

Assignee

Molecular Imprints, Inc. · US

Inventors

Cynthia B. Brooks · Austin, US
Dwayne L. LaBrake · Austin, US
Niyaz Khusnatdinov · Round Rock, US
Michael Nevin Miller · Austin, US
Sidlgata V. Sreenivasan · Austin, US
David J. Lentz · Salt Lake City, US
Frank Y. Xu · Round Rock, US

Key dates

Filing date	Apr 6, 2012
Grant date	Oct 1, 2013
Priority date	—
Expiry date	Apr 6, 2032

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB82Y40/00
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.