Method for forming light guide layer in semiconductor substrate
US8546162B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Sep 23, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jan 30, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/136
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a light guide layer with improved transmission reliability in a semiconductor substrate, the method including forming a trench in the semiconductor substrate, forming a cladding layer and a preliminary light guide layer in the trench such that only one of opposite side end portions of the preliminary light guide layer is in contact with an inner sidewall of the trench, and performing a thermal treatment on the substrate to change the preliminary light guide layer into the light guide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.