Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device
US8546163B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Sep 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided is a group-III nitride semiconductor laser device with a laser cavity allowing for a low threshold current, on a semipolar surface of a support base in which the c-axis of a hexagonal group-III nitride is tilted toward the m-axis. First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group-III nitride semiconductor laser device 11 has a laser waveguide extending in a direction of an intersecting line between the m-n plane and the semipolar surface 17a. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface to an edge 13d of the second surface 13b. The fractured faces are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.