Methods of manufacturing phase-change memory device and semiconductor device
US8546177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8413
Abstract
Methods of manufacturing a phase-change memory device and a semiconductor device are provided. The method of manufacturing the phase-change memory device includes forming a switching device layer, an ohmic contact layer, and a hard mask layer on a semiconductor substrate, patterning the hard mask layer to form a hard mask pattern, etching the ohmic layer and the switching layer using the hard mask pattern to form a pattern structure including an ohmic contact pattern, a switching device pattern, and the hard mask pattern, selectively oxidizing a surface of the pattern structure, forming an insulating layer to bury the pattern structure, and selectively removing the hard mask pattern other than the oxidized surface thereof to form a contact hole.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.