Semiconductor device and fabricating method thereof
US8546212B2 · kind B2 · utility
6Cited by
25References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jan 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device includes the following steps. First, a substrate is provided. At least one gate trench and a first inter-layer dielectric layer are formed on the substrate. A work function metallic layer is then formed in the gate trench. A first contact hole is then formed in the first inter-layer dielectric layer. A main conductive layer is formed in the gate trench and the first contact hole simultaneously.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.