SONOS non-volatile memory cell and fabricating method thereof
US8546226B2 · kind B2 · utility
4Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Oct 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
Abstract
A method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, wherein the method comprises steps as following: a pad oxide layer and a first hard mask layer are sequentially formed on a substrate. The pad oxide layer and the first hard mask layer are then etched through to form an opening exposing a portion of the substrate. Subsequently, an oxide-nitride-oxide (ONO) structure with a size substantially less than or equal to the opening is formed to coincide with the portion of the substrate exposed from the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.