Methods of manufacturing integrated semiconductor devices with single crystalline beam
US8546240B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 11, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Nov 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03H2009/155
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.