Method, apparatus and program for manufacturing silicon structure
US8546265B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2009 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Mar 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.