Patent · US Active

Deposition of group IV metal-containing films at high temperature

US8546276B2 · kind B2 · utility

2Cited by

4References

14Claims

0Family size

Assignee

L'Air Liquide, Societe Anonyme Pour l'Etude et l'Exploitation des Procedes Georges Claude · FR

Inventors

Julien Gatineau · Ibaraki, JP
Changhee Ko · Tsukuba, JP

Key dates

Filing date	Jul 14, 2010
Grant date	Oct 1, 2013
Priority date	—
Expiry date	Jul 21, 2030

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC23C16/45553
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

Disclosed are group IV metal-containing precursors and their use in the deposition of group IV metal-containing films {nitride, oxide and metal) at high process temperature. The use of cyclopentadienyl and imido ligands linked to the metal center secures thermal stability, allowing a large deposition temperature window, and low impurity contamination. The group IV metal (titanium, zirconium, hafnium)-containing f{umlaut over (υ)}m depositions may be carried out by thermal and/or plasma-enhanced CVD, ALD, and pulse CVD.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.