Memristive device

US8546785B2 · kind B2 · utility

Assignee

• HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. · US

Inventors

• Jianhua Yang · Palo Alto, US
• Feng Miao · Mountain View, US
• Wei Wu · Palo Alto, US
• Shih-Yuan Wang · Palo Alto, US
• R. Stanley Williams · Portola Valley, US

Key dates

• Filing date: Mar 31, 2010
• Grant date: Oct 1, 2013
• Expiry date: Dec 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.