Reflection convex mirror structure of a vertical light-emitting diode
US8546831B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 17, 2012 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | May 17, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.