Semiconductor structure and method for forming the same
US8546857B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 16, 2012 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jul 16, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
Abstract
A semiconductor structure and a method for forming the same are provided. The semiconductor structure comprises: a semiconductor substrate; a source region and a drain region defined in the semiconductor substrate respectively, and a trench formed in the source region and/or the drain region, in which a rare earth oxide layer is formed in the trench; a source and/or a drain formed on the rare earth oxide layer; and a channel region formed between the source and the drain. A relationship between a lattice constant a of the rare earth oxide layer and a lattice constant b of a semiconductor material of the source and/or the drain and/or the channel region is a=(n±c)b, where n is an integer, c is a mismatch ratio of lattice constants, and 0<c≦15%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.