High density lateral DMOS with recessed source contact
US8546879B2 · kind B2 · utility
10Cited by
6References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Aug 18, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
The present disclosure discloses a lateral DMOS with recessed source contact and method for making the same. The lateral DMOS comprises a recessed source contact which has a portion recessed into a source region to reach a body region of the lateral DMOS. The lateral DMOS according to various embodiments of the present invention may have greatly reduced size and may be cost saving for fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.