Embedded capacitor structure and the forming method thereof
US8546914B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2011 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jul 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/212
Abstract
A method for forming an embedded capacitor structure is provided. Firstly, a first dielectric layer having a trench therein on a substrate is provided. A capacitor structure is formed on the bottom surface of the trench. The capacitor structure includes a first metal layer, a capacitance-insulating layer and a second metal layer and the portion surface of the first metal layer on the bottom surface of the trench is exposed. A cap layer is formed on the top surface and the inner surface of the trench and on the capacitor structure. A second dielectric layer is formed on the cap layer. The portion of second dielectric layer and the portion of the cap layer are removed to form a plurality of contact windows therein, and the portion surface of the first metal layer and the portion surface of the second metal layer are exposed by the plurality of contact windows.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.