Hybrid superconducting-magnetic memory cell and array
US8547732B2 · kind B2 · utility
13Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2012 |
| Grant date | Oct 1, 2013 |
| Priority date | — |
| Expiry date | Jan 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N69/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.