Generating a pumping force in a silicon melt by applying a time-varying magnetic field
US8551247B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2009 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1008
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.