Dicing a semiconductor wafer
US8551792B2 · kind B2 · utility
1Cited by
5References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2009 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Sep 5, 2029 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method of dicing a semiconductor wafer comprises scribing at least one dielectric layer along dice lanes to remove material from a surface of the wafer using a laser with a pulse-width between 1 picosecond and 1000 picoseconds and with a repetition frequency corresponding to times between pulses shorter than a thermal relaxation time of the material to be scribed. The wafer is then diced through a metal layer and at least partially through a substrate of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.