Variable resistance memory device and method of forming the same
US8552412B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/882
Abstract
Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.