Semiconductor light-emitting diode and a production method therefor
US8552455B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 7, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Nov 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8316
Abstract
Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.