Thermal stress releasing structure of a light-emitting diode
US8552457B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 7, 2012 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Aug 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/819
Abstract
A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.