Aluminum indium antimonide focal plane array
US8552479B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2010 |
| Grant date | Oct 8, 2013 |
| Priority date | — |
| Expiry date | Feb 28, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/544
Abstract
In one embodiment, a detector includes an AlxIn(1-x)Sb absorber layer, and an AlyIn(1-y)Sb passivation layer disposed above the AlxIn(1-x)Sb absorber layer, wherein x<y. The detector further includes a junction formed in a region of the AlxIn(1-x)Sb absorber layer, and a metal contact disposed above the junction and through the AlyIn(1-y)Sb passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.